Sanyo Electric ECH8668
The ECH8660 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and high-speed switching , thereby enablimg high-density mounting.| Part No. | ECH8668 |
|---|---|
| Datasheet | ECH8668 Download |
| Manufacturer |  Sanyo Electric |
| Description | N-Channel and P-Channel Silicon MOSFETs |
| Buy | Stock & Price |
FEATURES
● N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching DeviceAPPLICATIONS
●● 1.8V drive. Halogen free compliance. Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) 1unit When mounted on ceramic substrate (900mm2×0.8mm) Conditions N-channel 20 ±10 7.5 40 1.3 1.5 150 --55 to +150 P-channel --20 ±10 --5 --40 Unit V V A A W W °C °CELECTRICAL CHARACTERISTICS
at Ta=25°C Parameter [N-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage V(BR)DSS IDSS IGSS VGS(off) ID=1mA, VGS=0V VDS=20V, VGS=0V VGS=±8V, VDS=0V VDS=10V, ID=1mA 0.5 20 1 ±10 1.3 V μA μA V Symbol Conditions Ratings min typ max Unit Marking : TP Continued on next page.
