onsemi ECH8668
The ECH8668 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and high-speed switching , thereby enablimg high-density mounting • 1.8V drive • Halogen free compliance • Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg Conditions PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) 1unit When...| Part No. | ECH8668 |
|---|---|
| Datasheet | ECH8668 Download |
| Manufacturer |  onsemi |
| Description | Power MOSFET |
| Buy | Stock & Price |
FEATURES
● The ECH8668 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and high-speed switching , thereby enablimg high-density mounting● 1.8V drive
● Halogen free compliance
● Protection diode in Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg Conditions PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) 1unit When mounted on ceramic substrate (900mm2×0.8mm) N-channel P-channel 20 --20 ±10 ±10 7.5 --5 40 --40 1.3 1.5 150 --55 to +150 Unit V V A A W W °C °C Stresses exceedingMAXIMUM RATINGS
may damage the device.MAXIMUM RATINGS
are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
