Sanyo Electric FW306
N-Channel Silicon MOSFET
| Part No. | FW306 |
|---|---|
| Datasheet | FW306 Download |
| Manufacturer |  Sanyo Electric |
| Description | N-Channel Silicon MOSFET |
| Buy | Stock & Price |
FEATURES
● High density mounting is possible because of the complex type which holds low-on-resistance, very-high-speed-switching and 4-volt-drive N- / P- channel / MOSFETs.● Low ON-state resistance.
ABSOLUTE MAXIMUM RATINGS
/ Ta=25°C Drain to Source Voltage Gate to Source Voltage Drain Current(DC) Drain Current(Pulse) Allowable power Dissipation Total Dissipation Channel Temperature Storage TemperatureELECTRICAL CHARACTERISTICS
/ Ta=25°C (N-channel) Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain to Source On State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage VDSS VGSS ID IDP PD PT Tch Tstg N-channel 30 ±25 5 32 1.7 2.0 150 --55 to ±150 min V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on) 1 RDS(on) 2 Ciss Coss Crss td(on) tr td(off) tf VSD ID=1mA VDS=30V VGS=±20V VDS=10V VD...