Sanyo Electric FW307
The FW307 incorporates an N-channel MOSFET and a unit : mm P-channel MOSFET that feature low ON-resistance and 2129 high-speed switching, thereby enabling high-density mounting.APPLICATIONS
PreliminaryFEATURES
● Package Dimensions● 8 Excellent ON-resistance characteristic. [FW307] 5 0.3 4.4 6.0 5.0 1.5 Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg 0.595 1.27 0.43 0.1 1.8max 1 4 0.2 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : SOP8 Conditions Ratings N-channel 250 ±30 1 P-channel --250 ±30 --0.7 --3 1.7 2.0 150 --55 to +150 Unit V V A A W W °C °C PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm)1unit Mounted on a ceramic board (900mm2!0.8mm) 5ELECTRICAL CHARACTERISTICS
at Ta=25°C Parameter [N-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Gate-to-Source Leakage Current V(BR)DSS I...