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ISB-A27-0 - N-channel MOSFET Array

Key Features

  • Includes 4 identical N-channel MOSFET devices in a single package.
  • 1.6 mm×1.6 mm×0.75 mm ultrathin, miniature package.
  • 2.5V drive capability. Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Conditions Drain-to-source voltage Gate-to-source voltage Drain current Allowable power dissipation VDSS VGSS ID Pd max Common to TR1, TR2, TR3, and TR4 When mounted on a specified board.
  • Operating ambient temperature Topr Storage ambient temp.

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Other Datasheets by SANYO (now Panasonic)

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ISB-A40-0 Reverse-Current Flow Prevention
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : EISB0005 ISB-A27-0 Ultrathin Miniature Package 4-channel N-channel MOSFET Array Overview The ISB-A27-0 is a SANYO’S original SIP (System In Package) IC that includes four N-channel MOSFET devices. They are mounted into one thin-and-small package by utilizing SANYO’s high-density mounting technology, “Integrated System in Board (ISB)”. The advantage using its ultrathin miniature package makes the ISB-A27-0 ideal for switching devices in small, lowpower circuits for cell phones and other portable equipment. It achieves significant reduction in the component mounting area compared to discrete device implementations (approx 25% smaller than ECSP package). Features • Includes 4 identical N-channel MOSFET devices in a single package. • 1.6 mm×1.6 mm×0.