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ISB-A40-0 - Reverse-Current Flow Prevention

Key Features

  • Incorporates two chips of 30V/1A and 30V/200mA, respectively.
  • Miniature package makes this IC ideal for miniaturization of electronic devices and high-density mounting. Specifications Maximum Ratings at Ta = 25°C Internal Device Parameter Symbol Conditions D1, D2 Repetitive peak reverse voltage VRRM Average output current IO D3, D4 Repetitive peak reverse voltage VRRM Average output current Allowable power dissipation IO PD-D1, 2.
  • PD-D3, 4.
  • Storag.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : EISB*0008 Ultrathin Miniature Package ISB-A40-0 Reverse-Current Flow Prevention for a Cell Phone Charger Circuit SBD×4 Overview The ISB-A40-0 incorporates four chips of schottky barrier diodes that are necessary for preventing reverse-current flow in charger circuits. This IC is optimal for high-density mounting and miniaturization of electronic products. Applications • Battery charger circuit for portable electronic devices Features • Incorporates two chips of 30V/1A and 30V/200mA, respectively. • Miniature package makes this IC ideal for miniaturization of electronic devices and high-density mounting.