ISB-A40-0 Datasheet | SANYO

Overview The ISB-A40-0 incorporates four chips of schottky barrier diodes that are necessary for preventing reverse-current flow in charger circuits. This IC is optimal for high-density mounting and miniaturization of electronic products. Applications - Battery charger circuit for portable electronic devices Features - Incorporates two chips of 30V/1A and 30V/200m A, respectively. - Miniature package makes this IC ideal for miniaturization of electronic devices and high-density mounting. Specifications Maximum Ratings at Ta = 25°C Internal Device Parameter Symbol Conditions D1, D2 Repetitive peak reverse voltage VRRM Average output current D3, D4 Repetitive peak reverse voltage VRRM Average output current Allowable power dissipation IO PD-D1, 2 - PD-D3, 4 - Storage ambient temperature Tstg - Value of an element when mounted on a 40mm×40mm×1.0mm FR4 specified board. Ratings 30 1.0 30 200 0.55 0.4 -40 to +125 Unit V A V m A W W °C Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, munication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If...