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LC35W1000BM Datasheet Asynchronous Silicon Gate 1m (131 /072 Words X 8 Bits) Sram

Manufacturer: SANYO (now Panasonic)

Overview: Ordering number : ENN*6624 CMOS IC LC35W1000BM, BTS-70U/10U Asynchronous Silicon Gate 1M (131,072 words × 8 bits) SRAM Preliminary Overview The LC35W1000BM and LC35W1000BTS-70U/10U are asynchronous silicon gate CMOS static RAM devices with a 131,072-word by 8-bit structure. They provide two chip enable pins (CE1 and CE2) for device select/deselect control and one output enable pin (OE) for output control. They feature high speed, low power, and a wide operating temperature range.This makes them optimal for use in systems that require high speed, low power, and battery backup. They also support easy memory expansion. Package Dimensions unit: mm 3205A-SOP32 [LC35W1000BM-70U/10U] 32 17 0.8 11.2 3.1max 0.15 0.2 (2.7) 20.

Key Features

  • Low-voltage operation: 2.7 to 3.6 V.
  • Wide operating temperature range:.
  • 40 to +85°C.
  • Access time: 70 ns (maximum): LC35W1000BM and LC35W1000BTS-70U. 100 ns (maximum): LC35W1000BM and LC35W1000BTS-10U.
  • Low current drain Standby mode: 0.1 µA (typical.
  • ) at Ta = +25°C 10.0 µA (maximum) at Ta =.
  • 40 to +70°C 20.0 µA (maximum) at Ta =.
  • 40 to +85°C.
  • Data retention voltage: 2.0 to 3.6 V.
  • No clock required (fully static ci.

More Datasheets from SANYO (now Panasonic)

Part Number Description
LC35W1000BTS-10U Asynchronous Silicon Gate 1M (131 /072 words x 8 bits) SRAM
LC35W1000BTS-70U Asynchronous Silicon Gate 1M (131 /072 words x 8 bits) SRAM
LC35W256EM 256K (32K words x 8 bits) SRAM Control pins: OE and CE
LC35W256EM-10W 256K (32K words x 8 bits) SRAM Control pins: OE and CE
LC35W256ET-10W 256K (32K words x 8 bits) SRAM Control pins: OE and CE
LC3514 1024 x 4-Bit High Speed CMOS Static RAM
LC3514A 1024 x 4-Bit High Speed CMOS Static RAM
LC3517A 2048-word x 8bit COMS Syatic RAM
LC3517AL 2048-word x 8bit COMS Syatic RAM
LC3517AM 2048-word x 8bit COMS Syatic RAM

LC35W1000BM Distributor