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MCH3401 - Ultrahigh-Speed Switching Applications

Key Features

  • Low ON resistance.
  • Ultrahigh-speed swithcing.
  • 2.5V drive. Package Dimensions unit:mm 2167 [MCH3401] 0.25 0.3 3 0.15 1.6 1 0.65 2.0 2 0.25 0.85 2.1 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2×0.8mm) Conditi.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:ENN6443 N-Channel Silicon MOSFET MCH3401 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed swithcing. · 2.5V drive. Package Dimensions unit:mm 2167 [MCH3401] 0.25 0.3 3 0.15 1.6 1 0.65 2.0 2 0.25 0.85 2.1 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2×0.8mm) Conditions 1 : Gate 2 : Source 3 : Drain SANYO : MCPH3 0.15 Ratings 30 ±10 1.4 5.