Package Dimensions
unit : mm 2167
[MCH3409]
0.25
0.3 0.15
Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. 3
1.6 2.1
1
0.65 2.0
2
0.25
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions
0.15
Specifications
1 : Gate 2 : Source 3 : D.
Full PDF Text Transcription for MCH3409 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
MCH3409. For precise diagrams, and layout, please refer to the original PDF.
Ordering number : ENN6911 MCH3409 N-Channel Silicon MOSFET MCH3409 Ultrahigh-Speed Switching Applications Preliminary Features • • • Package Dimensions unit : mm 2167 [MC...
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tions Preliminary Features • • • Package Dimensions unit : mm 2167 [MCH3409] 0.25 0.3 0.15 Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. 3 1.6 2.1 1 0.65 2.0 2 0.25 Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions 0.15 Specifications 1 : Gate 2 : Source 3 : Drain SANYO : MCPH3 Ratings 20 ± 10 2.0 8.0 0.9 150 --55 to +150 Unit V V A A W °C °C Mounted on a ceramic board (900mm2!0.
MCH3409 Datasheet
