Sanyo Electric MCH5805
P-Channel Silicon MOSFET
APPLICATIONS
FEATURES
● Composite type with a P-channel sillicon MOSFET (MCH3314) and a Schottky barrier diode (SB01-05) contained in one package facilitating high-density mounting. [MOSFET]● Low ON-resistance.
● Ultrahigh-speed switching.
● 4V drive. [SBD]
● Short reverse recovery time.
● Low forward voltage. Package Dimensions unit : mm 2195 [MCH5805] 0.3 45 0.15 2.1 1.6 0.25 0.25 3 21 0.65 2.0 0.85 0.07 1 : Gate 5 4 2 : Source 3 : Anode 4 : Cathode 5 : Drain 1 2 3 SANYO : MCPH5 Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature [SBD] Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature Marking : QE Symbol VDSS VGSS ID IDP PD Tch Tstg VRRM VRSM IO IFSM Tj Tstg Conditions PW≤10µs, duty cycle≤1% Mounted on a...