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MCH5802 - DC / DC Converter Applications

Key Features

  • Package Dimensions Composite type with a P-Channel Sillicon MOSFET unit : mm (MCH3308) and a Schottky Barrier Diode (SBS006M) 2195 contained in one package facilitating high-density mounting. [MOSFET].
  • Low ON-resistance.
  • Ultrahigh-speed switching.
  • 4V drive. [SBD].
  • Short reverse recovery time.
  • Low forward voltage. 0.25 2.1 1.6 0.25 [MCH5802] 0.3 0.15 4 5 0.65 2.0 0.07 3 2 1 5 4 0.85 1 : Gate 2 : Source 3 : Anode 4 : Cathode 5.

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Full PDF Text Transcription for MCH5802 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for MCH5802. For precise diagrams, and layout, please refer to the original PDF.

Ordering number : ENN6961 MCH5802 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode MCH5802 DC / DC Converter Applications Features • Package Dimensions Comp...

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5802 DC / DC Converter Applications Features • Package Dimensions Composite type with a P-Channel Sillicon MOSFET unit : mm (MCH3308) and a Schottky Barrier Diode (SBS006M) 2195 contained in one package facilitating high-density mounting. [MOSFET] • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. [SBD] • Short reverse recovery time. • Low forward voltage. 0.25 2.1 1.6 0.25 [MCH5802] 0.3 0.15 4 5 0.65 2.0 0.07 3 2 1 5 4 0.