Composite type with an NPN transistor and a Schottky unit : mm barrier diode contained in one package facilitating 2200 high-density mounting. The MCH5702 consists of two chips which are equivalent to the MCH6201 and the SBS006, respectively. Ultrasmall package (0.85mm high when mounted) facilitates miniaturization in end products. 0.25 0.25
[MCH5702]
0.3 4 5 0.15
0.65 2.0
0.07
3
2
1
5
4
Specifications
Absolute Maximum Ratin.
Full PDF Text Transcription for MCH5702 (Reference)
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MCH5702. For precise diagrams, and layout, please refer to the original PDF.
Ordering number : ENN7076 MCH5702 TR : NPN Epitaxial Planar Silicon Transistor SBD : Schottky Barrier Diode MCH5702 DC / DC Converter Applications Features • Package Dime...
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r Diode MCH5702 DC / DC Converter Applications Features • Package Dimensions • 2.1 1.6 • Composite type with an NPN transistor and a Schottky unit : mm barrier diode contained in one package facilitating 2200 high-density mounting. The MCH5702 consists of two chips which are equivalent to the MCH6201 and the SBS006, respectively. Ultrasmall package (0.85mm high when mounted) facilitates miniaturization in end products. 0.25 0.25 [MCH5702] 0.3 4 5 0.15 0.65 2.0 0.
MCH5702 Datasheet
