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MCH6601 - Ultrahigh-Speed Switching Applications

Features

  • Low ON resistance.
  • Ultrahigh-speed swithcing.
  • 2.5V drive.
  • Composite type with 2 MOSFETs contained in one package, facilitating high-density mounting. Package Dimensions unit:mm 2173 [MCH6601] 0.25 0.3 6 5 4 1.6 2.1 0.15 1 2.0 0.25 2 3 0.65 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS.

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Datasheet Details

Part number MCH6601
Manufacturer Sanyo
File Size 43.69 KB
Description Ultrahigh-Speed Switching Applications
Datasheet download datasheet MCH6601 Datasheet
Additional preview pages of the MCH6601 datasheet.

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Full PDF Text Transcription

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Ordering number:ENN6458 P-Channel Silicon MOSFET MCH6601 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed swithcing. · 2.5V drive. · Composite type with 2 MOSFETs contained in one package, facilitating high-density mounting. Package Dimensions unit:mm 2173 [MCH6601] 0.25 0.3 6 5 4 1.6 2.1 0.15 1 2.0 0.25 2 3 0.65 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions 1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 SANYO : MCPH6 0.15 0.85 Ratings –30 ±10 –0.2 –0.8 0.
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