RG2006LN - Low VF / High-Speed Switching Diode

SANYO (now Panasonic)

Key Features

High breakdown voltage (VRRM=600V).
High reliability.
One-point ﬁxing type plastic mold package facilitating easy mounting and heat dissipation.
Fast reverse recovery time.
Low noise at the time of reverse recovery. Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Peak Output Current Surge Forward Current Junction Temperature Storage Tempe.

RG2006LN low vf / high-speed switching diode by SANYO (now Panasonic) - Datasheet Preview

Datasheet Details

Part number	RG2006LN
Manufacturer	SANYO (now Panasonic)
File Size	89.45 KB
Description	Low VF / High-Speed Switching Diode
Datasheet	RG2006LN Datasheet

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Ordering number : ENA1434 RG2006LN SANYO Semiconductors DATA SHEET RG2006LN Diffused Junction Silicon Diode Low VF • High-Speed Switching Diode Features • High breakdown voltage (VRRM=600V). • High reliability. • One-point ﬁxing type plastic mold package facilitating easy mounting and heat dissipation. • Fast reverse recovery time. • Low noise at the time of reverse recovery.