RG2006LN Description
ENA1434 RG2006LN SANYO Semiconductors DATA SHEET RG2006LN Diffused Junction Silicon Diode Low VF High-Speed Switching Diode.
RG2006LN Key Features
- High breakdown voltage (VRRM=600V)
- High reliability
- One-point fixing type plastic mold package facilitating easy mounting and heat dissipation
- Fast reverse recovery time
- Low noise at the time of reverse recovery