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SCH2410 - N-Channel Silicon MOSFET

Key Features

  • 1.5V drive.
  • Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Electrical Characteristics at Ta=25°C Conditions PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2.

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Other Datasheets by SANYO (now Panasonic)

Part Number Description
SCH2830 P-Channel Silicon MOSFET
SCH1301 P-Channel Silicon MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENA1026 SCH2410 SANYO Semiconductors DATA SHEET SCH2410 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • 1.5V drive. • Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Electrical Characteristics at Ta=25°C Conditions PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2✕0.8mm) 1unit Ratings Unit 60 V ±10 V 200 mA 800 mA 0.