SCH2410
Features
- 1.5V drive.
- posite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature
Symbol
VDSS VGSS
ID IDP PD Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2✕0.8mm) 1unit
Ratings
Unit
±10
200 m A
800 m A
°C
--55 to +150
°C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance Output Capacitance Reverse Transfer Capacitance Marking : LK
V(BR)DSS IDSS IGSS
VGS(off) ⏐yfs⏐
RDS(on)1 RDS(on)2 RDS(on)3
Ciss
Coss
Crss
ID=1m A, VGS=0V VDS=60V, VGS=0V VGS=±8V,...
