Sanyo Electric TF202THC
The TF202THC is classified by IDSS as follows : (unit : μA) Marking Rank IDSS E4 4 140 to 240 E5 5 210 to 350 Package Dimensions unit : mm (typ) 7031-001 Top View 1.4 0.2 0.25 3 1.2 0.8 Test Circuit Voltage gain Frequency Characteristic Distortion Reduced Voltage Characteristic 1kΩ VCC=4.5V VCC=1.5V 1 0.2 2 0.2 0.45 0.34 0.1 15pF 33μF + VTVM V OSC THD B A Bottom View 0.07 Output Impedance 1 : Drain 2 : Source 3 : Gate SANYO : VTFP 0.07 500 450 400 ID -- VDS 500 450 400 ID -- VDS Drain Current, ID -- μA Drain Current, ID -- μA 350 300 250 200 150 100 50 0 0 1 2 3 4 5 6 350 300 250 200 VGS=0V...| Part No. | TF202THC |
|---|---|
| Datasheet | TF202THC Download |
| Manufacturer |  Sanyo Electric |
| Description | N-channel Silicon Junction FET |
| Buy | Stock & Price |
FEATURES
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● N-channel Silicon Juncton FET Electret Condenser Microphone
APPLICATIONS
Ultrasmall package facilitates miniaturization in end products. Especially suited for use in electret condenser microphone for audio equipments and telephones. Excellent voltage characteristics. Excellent transient characteristics. Adoption of FBET process. Halogen free compliance. SpecificationsABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VGDO IG ID PD Tj Tstg Conditions Ratings --20 10 1 100 150 --55 to +150 Unit V mA mA mW °C °CELECTRICAL CHARACTERISTICS
at Ta=25°C Parameter Gate-to-Drain Breakdown Voltage Cutoff Voltage Symbol V(BR)GDO VGS(off) IG=--100μA VDS=5V, ID=1μA Conditions Ratings min --20 --0.2 --0.6 --1.0 typ max Unit V V Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard a...
