onsemi TF202THC
The TF202THC is classified by IDSS as follows : (unit : μA) Rank 4 5 IDSS 140 to 240 210 to 350 Test Circuit Voltage gain Frequency Characteristic Distortion Reduced Voltage Characteristic 1kΩ 15pF 33μF + VCC=4.5V VCC=1.5V OSC VTVM V THD B A Output Impedance Ordering Information Device TF202THC-4-TL-H TF202THC-5-TL-H Package VTFP VTFP Shipping 8,000pcs./reel 8,000pcs./reel memo Pb Free and Halogen Free No.FEATURES
● Ultrasmall package facilitates miniaturization in end products● Especially suited for use in electret condenser microphone for audio equipments and telephones
● Excellent voltage characteristics
● Excellent transient characteristics
● Adoption of FBET process
● Halogen free compliance Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Symbol Gate to Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature VGDO IG ID PD Tj Storage Temperature Tstg Conditions Ratings --20 10 1 100 150 --55 to +150 Unit V mA mA mW °C °C Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. LOT No. LOT No. RANK Package Dimensions unit : mm (typ) 7031A-001 0.2 0.8 0.2 1.4 0.25 0.1 3 TF202THC-4-TL-H TF202THC-5-TL-H 0 to 0.02 1 0.45 2 0.2 1.2 0.34 0.07 12 3 1 : Drain 2 : Source 3 : Gate VTFP 0.07 P...