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TT2190LS - NPN Transistor

Key Features

  • Package Dimensions unit : mm 2079D [TT2190LS] 10.0 3.2 3.5 7.2 4.5 2.8 High speed. High breakdown voltage (VCBO=1500V). High reliability (Adoption of HVP process). Adoption of MBIT process. On-chip damper diode. 16.1 16.0 3.6 0.9 1.2 14.0 1.2 0.75 0.7 1 2 3 2.4 1 : Base 2 : Collector 3 : Emitter SANYO : TO-220FI(LS) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emi.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENN7551 TT2190LS NPN Triple Diffused Planar Silicon Transistor TT2190LS Color TV Horizontal Deflection Output Applications Features • • • • • Package Dimensions unit : mm 2079D [TT2190LS] 10.0 3.2 3.5 7.2 4.5 2.8 High speed. High breakdown voltage (VCBO=1500V). High reliability (Adoption of HVP process). Adoption of MBIT process. On-chip damper diode. 16.1 16.0 3.6 0.9 1.2 14.0 1.2 0.75 0.7 1 2 3 2.