Datasheet Details
| Part number | TT2190 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 175.99 KB |
| Description | NPN Transistor |
| Datasheet | TT2190-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor TT2190.
| Part number | TT2190 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 175.99 KB |
| Description | NPN Transistor |
| Datasheet | TT2190-INCHANGE.pdf |
|
|
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·High speed.
·High Breakdown Voltage- : VCBO= 1500V (Min) ·Low Collector Saturation Voltage- : VCE(sat)= 3.0V(Max.)@ IC= 4.5A ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Color TV Horizontal Deflection Output Applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 8 A ICP Collector Current- Peak PC Collector Power Dissipation @ TC= 25℃ TJ Junction Temperature 20 A 35 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector Sustain Voltage IC=100mA, IB=0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A;
IB= 0.9A VBE(sat) Base-Emitter Saturation Voltage IC= 4.5A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
TT2190 | (TT2187 - TT2201) Control Transformer | TEMCo |
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TT2190LS | NPN Transistor | Sanyo |
| Part Number | Description |
|---|---|
| TT2142 | NPN Transistor |
| TT2170LS | NPN Transistor |