High Breakdown Voltage-
: VCBO= 1500V (Min)
Low Collector Saturation Voltage-
: VCE(sat)= 3.0V(Max.)@ IC= 4.5A
Built-in Damper Diode
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for Color TV Horizo
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isc Silicon NPN Power Transistor
TT2190
DESCRIPTION ·High speed. ·High Breakdown Voltage-
: VCBO= 1500V (Min) ·Low Collector Saturation Voltage-
: VCE(sat)= 3.0V(Max.)@ IC= 4.5A ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for Color TV Horizontal Deflection Output Applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCEO
Collector-Emitter Voltage
800
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current- Continuous
8
A
ICP
Collector Current- Peak
PC
Collector Power Dissipation @ TC= 25℃
TJ
Junction Temperature
20
A
35
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc Website：www.iscsemi.
TT2190 Datasheet
