TT2190 Datasheet
TT2190 Datasheet (Inchange Semiconductor)
Inchange Semiconductor
·High speed. ·High Breakdown Voltage- : VCBO= 1500V (Min) ·Low Collector Saturation Voltage- : VCE(sat)= 3.0V(Max.)@ IC= 4.5A ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device pe.
=0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A; IB= 0.9A VBE(sat) Base-Emitter Saturation Voltage IC= 4.5A; IB= 0.9A IEBO Emitter Cutoff Current VEB= 4V; IC= 0 ICBO Collector Cutoff Current VCB= 800V; IE= 0 ICES Emitter Cutoff Current VCE=1500V, RBE=0 hFE 1 DC Current Gain .
TT2190 Datasheet (TEMCo)
TEMCo
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