Sanyo Electric VEC2611
The VEC2611 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance, thereby enabling high-density mounting.| Part No. | VEC2611 |
|---|---|
| Datasheet | VEC2611 Download |
| Manufacturer |  Sanyo Electric |
| Description | N-Channel and P-Channel Silicon MOSFETs |
| Buy | Stock & Price |
FEATURES
● N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching DeviceAPPLICATIONS
●● 1.8V drive. Mounting height 0.75mm. Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2✕0.8mm)1unit Mounted on a ceramic board (900mm2✕0.8mm) Conditions N-channel 20 ±10 3 12 0.9 1.0 150 --55 to +150 P-channel -12 ±8 --2.6 --10.4 Unit V V A A W W °C °CELECTRICAL CHARACTERISTICS
at Ta=25°C Parameter [N-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance V(BR)DSS IDSS IGSS VGS(off) yfs ID=1mA, VGS=0V VDS=20V, VGS=0V VGS=±8V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=1.5A 20 1 ±10 0.4 3.3 5.6 1.3 V µA µA V S Symbol Conditions Ratings min typ max Unit Marking : CP Continued on next page.
