Sanyo Electric VEC2612
The VEC2612 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance, thereby enabling high-density mounting.| Part No. | VEC2612 |
|---|---|
| Datasheet | VEC2612 Download |
| Manufacturer |  Sanyo Electric |
| Description | N-Channel and P-Channel Silicon MOSFETs |
| Buy | Stock & Price |
FEATURES
●● N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device
APPLICATIONS
●● The best suited for inverter applications. 4V drive. Mounting height 0.75mm. Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2✕0.8mm)1unit Mounted on a ceramic board (900mm2✕0.8mm) Conditions N-channel 30 ±20 3 12 0.9 1.0 150 --55 to +150 P-channel -30 ±20 --3 -12 Unit V V A A W W °C °CELECTRICAL CHARACTERISTICS
at Ta=25°C Parameter [N-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance V(BR)DSS IDSS IGSS...
