Sanyo Electric VEC2901
Switching Flash Applications
FEATURES
●● TR : NPN Epitaxial Planar Silicon Transistor FET : N-Channel Silicon MOSFET Switching, Flash
APPLICATIONS
Composite type with an NPN transistor and N-ch MOS-FET contained in one package facilitating high-density mounting. Ultrasmall package permitting applied sets to be made small and slim. SpecificationsABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter [TR] Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature [FET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% 30 ±10 150 600 0.25 150 --55 to +150 V V mA mA W °C °C VCBO VCEO VEBO IC ICP PC Tj Tstg Mounted on a ceramic board (900mm2!0.8mm) 1unit 100 50 6 5 8 1.1 150 --55 to +150 V V V A A W °C °C Symbol Conditions Ratings Unit Electrical Char...