Sanyo Electric VEC2905
P-Channel Silicon MOSFET
FEATURES
●● PNP Epitaxial Planar Silicon Transistor P-Channel Silicon MOSFET General-Purpose Switching Device
APPLICATIONS
Composite type, facilitatiing high-density mounting. Mounting height 0.75mm. SpecificationsABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter [TR] Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Collector Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature [FET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature VDSS VGSS ID IDP PD Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2✕0.8mm) 1unit --20 ±10 --3 --12 1.1 150 --55 to +150 V V A A W °C °C VCBO VCEO VECO VEBO IC ICP IB PC Tj Tstg When mounted on ceramic substrate (900mm2✕0.8mm) 1unit --30 --30 --6.5 --5 --3 --5 --600 1.1 150 --55 to +150 V V V V A A mA W °C °C Symbol...