Datasheet Summary
Ordering number:EN3182B
PNP Epitaxial Planar Silicon Transistor
High hFE, Low-Frequency General-Purpose Amplifier Applications
Features
- Adoption of FBET, MBIT processes.
- High DC current gain (hFE=500 to 1200).
- Large current capacity.
- Low collector-to-emitter saturation voltage.
- High VEBO.
Package Dimensions unit:mm 2038
[2SA1766]
Specifications...
