2N5612A Description
·With TO-66 package ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For general-purpose amplifier ; Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN 2N5612A SYMBOL TYP. MAX UNIT VCEO(SUS) VCEsat VBE ICBO ICEO IEBO hFE fT Collector-emitter sustaining voltage IC=50mA ;IB=0 IC=1A;.