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2N5612A Datasheet Silicon NPN Power Transistors

Manufacturer: SavantIC

Datasheet Details

Part number 2N5612A
Manufacturer SavantIC
File Size 139.14 KB
Description Silicon NPN Power Transistors
Datasheet download datasheet 2N5612A Datasheet

General Description

·With TO-66 package ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For general-purpose amplifier ;

and switching applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 120 100 5 5 25 150 -65~150 UNIT V V V A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 4.37 UNIT /W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN 2N5612A SYMBOL TYP.

MAX UNIT VCEO(SUS) VCEsat VBE ICBO ICEO IEBO hFE fT Collector-emitter sustaining voltage IC=50mA ;IB=0 IC=1A;

Overview

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors.