2N6037
DESCRIPTION
- With TO-126 package
- plement to type 2N6034/6035/6036
- DARLINGTON
- High DC current gain APPLICATIONS
- Designed for general-purpose amplifier and low-speed switching applications
PINNING(see Fig.2) PIN 1 2 3 DESCRIPTION
Emitter Collector Base
2N6037 2N6038 2N6039
Absolute maximum ratings(Ta= )
SYMBOL PARAMETER 2N6037 VCBO Collector-base voltage 2N6038 2N6039 2N6037 VCEO Collector-emitter voltage 2N6038 2N6039 VEBO IC ICM IB PD Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE 40 60 80 40 60 80 5 4 8 0.1 40 150 -65~150 V A A A W V V UNIT
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 3.12 UNIT /W
Savant IC Semiconductor
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Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER 2N6037 VCEO(SUS) Collector-emitter...
