2N6250 Overview
Key Specifications
Package: TO-3
Mount Type: Through Hole
Max Operating Temp: 200 °C
Min Operating Temp: -55 °C
Description
With TO-3 package - High voltage,high speed - Low collector saturation voltage APPLICATIONS - High voltage inverters - Switching regulators - Line operated amplifier PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Fig.1 simplified outline (TO-3) and symbol SYMBOL PARAMETER 2N6249 VCBO Collector-base voltage 2N6250 2N6251 2N6249 VCEO Collector-emitter voltage 2N6250 2N6251 VEBO IC ICM IB PT Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE 300 375 450 200 275 350 6 10 30 10 175 200 -65~200 V A A A W V V UNIT SYMBOL Rth j-c PARAMETER SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N6249 VCEO(SUS) Collector-emitter sustaining voltage 2N6250 2N6251 2N6249 VCE(sat) Collector-emitter saturation voltage 2N6250 2N6251 2N6249 VBE(sat) Base-emitter saturation voltage 2N6250 2N6251 ICEV Collector cut-off current 2N6249 ICEO Collector cut-off current 2N6250 2N6251 IEBO Emitter cut-off current 2N6249 hFE DC current gain 2N6250 2N6251 fT Is/b Transition frequency Second breakdown collector current With base forward biased IC=10A ; VCE=3V IC=10A;IB=1.0A IC=10A;IB=1.25 A IC=10A;IB=1.67 A IC=10A;IB=1.0A IC=10A;IB=1.25 A IC=10A;IB=1.67 A IC=200mA ; IB=0 SYMBOL 2N6249 2N6250 2N6251 CONDITIONS MIN 200 275 350 TYP. MAX UNIT V 1.5 V 2.25 V VCE=RatedVCEV;VBE=-1.5V TC=125 VCE=150V;IB=0 VCE=225V;IB=0 VCE=300V;IB=0 VEB=6V; IC=0 10 8 6 IC=1A ; VCE=10V f=1MHz VCE=30V,t=1.0s, Nonrepetitive 2.5 5.8 5.0 10 mA 5.0 mA 1.0 50 50 50 mA MHz.
