Microsemi 2N6250
NPN POWER SILICON TRANSISTOR
| Part No. | 2N6250 |
|---|---|
| Datasheet | 2N6250 Download |
| Manufacturer |  Microsemi |
| Description | NPN POWER SILICON TRANSISTOR |
| Buy | Stock & Price |
MAXIMUM RATINGS
Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Base Current Total Power Dissipation @ TA = +250C (1) @ TC = +250C (2) Operating & Storage Temp Range Symbol 2N6249 2N6250 VCEO VCBO VEBO IC IB PT Top, Tstg 200 300 275 375 6.0 10 5.0 5.5 175 -55 to +200 Max. 1.0 2N6251 350 450 Units Vdc Vdc Vdc Adc Adc W W 0 C Unit C/W THERMAL CHARACTERISTICS Characteristics Symbol Thermal Resistance, Junction-to-Case RθJC 1) Derate linearly at 34.2 mW/0C for TA > +250C 2) Derate linearly at 1.0 W/0C for TC > +250C 0 TO-3 (TO-204AA)* *See Appendix A for Package OutlineELECTRICAL CHARACTERISTICS
(TA = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 200 mAdc; L = 42 mH; F = 30-60 Hz (See Figure 3 of MIL-PRF-19500/510) 2N6249 2N6250 2N6251 V(BR)CEO 200 275 350 Vdc Collector-Emitter Breakdown Voltage IC = 200 mAdc; L = 14 mH; F = 30-60 Hz; RBE = 50Ω (See Figure 3 of...