2N6295
DESCRIPTION
- With TO-66 package
- DARLINGTON
- plement to type 2N6296/6297 APPLICATIONS
- For high gain amplifier and medium speed switching applications
PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO PARAMETER Collector-base voltage 2N6294 2N6295 Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Base current Total power dissipation Junction temperature Storage temperature TC=25 2N6294 2N6295 Open collector Open base CONDITIONS Open emitter VALUE 60 80 60 80 5 4 8 80 50 150 -65~200 V A A m A W V UNIT V
VCEO VEBO IC ICM IB PT Tj Tstg
THERMAL CHARACTERISTICS
SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case MAX 3.5 UNIT /W
Savant IC Semiconductor
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Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER 2N6294 IC=50m A ; IB=0 2N6295 IC=2A ;IB=8m A IC=4A ;IB=40m A IC=4A...
