2SA1329
2SA1329 is SILICON POWER TRANSISTOR manufactured by SavantIC.
DESCRIPTION
- With TO-220 package
- plement to type 2SC3346
- Low collector saturation voltage
- High speed switching time APPLICATIONS
- High current switching applications
PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -80 -80 -6 -12 -2 40 150 -55~150 UNIT V V V A A W
Savant IC Semiconductor
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Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=-50m A ,IB=0 IC=-6A; IB=-0.3A IC=-6A; IB=-0.3A VCB=-80V; IE=0 VEB=-6V; IC=0 IC=-1A ; VCE=-1V IC=-6A ; VCE=-1V IE=0 ; VCB=-10V;f=1MHz IC=-1A ; VCE=-5V 70 40 MIN -80 SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO h FE-1 h FE-2 Cob f T
TYP.
UNIT V
-0.2 -0.9
-0.4 -1.2 -10 -10 240
V V µA µA
400 50 p F MHz
Switching times ton ts tf Turn-on time Storage time Fall time IB1=- IB2=-0.3A RL=5B;VCC=-30V 0.3 1.0 0.5 µs µs µs h FE-1 Classifications O 70-140 Y 120-240
Savant IC Semiconductor
..
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
Savant IC Semiconductor
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