. Low Collector Saturation Voltage
: VCE ( sat )=-0.4V(Max. ) at I C=-6A . High Speed Switching Time : t st g=l. 0As(Typ. . Complementary to 2SC3346
Unit in mm 10.3MAX. ^3.6ia2.
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SILICON PNP EPITAXIAL TYPE (PCT PROCESS)
HIGH CURRENT SWITCHING APPLICATIONS.
FEATURES . Low Collector Saturation Voltage
: VCE ( sat )=-0.4V(Max.) at I C=-6A . High Speed Switching Time : t st g=l. 0As(Typ. . Complementary to 2SC3346
Unit in mm 10.3MAX. ^3.6ia2
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC Collector-Base Voltage
SYMBOL VCBO
RATING
-80
UNIT
2.5 4
2.5 4
X
Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation
(Tc=25°C) Junction Temperature Storage Temperature Range
VcEO v EBO ic IB PC
stg
ELECTRICAL CHARACTERISTICS (Ta=25 C)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
I CBO
Emitter Cut-off Current
lEBO
-80
%-6 -1 -.3-3.
-12
-2 1. BASE 2.
2SA1329 Datasheet
