2SB677 Description
Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=-50mA, IB=0 IC=-2A ,IB=-4mA IC=-2A ,IB=-4mA VCB=-60V, IE=0 VEB=-5V; VCE=-2V 2000 1000 MIN -40 TYP. 2SB677...