2SB677
2SB677 is SILICON PNP TRANSISTOR manufactured by Toshiba.
SILICON PNP EPITAXIAL TYPE (PCT PROCESS) (DARLINGTON POWER)
SWITCHING APPLICATIONS.
HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. POWER AMPLIFIER APPLICATIONS.
Features
:
- High DC Current Gain
: h FE =2000 (Min.) (vCE=-2V, I C=-1A) Low Saturation Voltage
VCE (satr-1
- 57
Max
(
->
(i c =
- 2A)
INDUSTRIAL APPLICATIONS Unit in mm
10.3MAX,, 03.6±O.2
MAXIMUM RATINGS (Ta=25°c) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
SYMBOL VCBO VCEO VEBO
RATING I60
-40 -5
UNIT V
2.54 lO
8 dJ
13 3
><
Collector Current
Collector Power Dissipation ( tc=25 ° C )
Junction...
