SavantIC 2SC1050
Silicon NPN Power Transistors
DESCRIPTION
With TO-3 package High breakdown voltageAPPLICATIONS
For use in audio and general purpose applications PINNING (See Fig.2) PINDESCRIPTION
1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER VCBO Collector-base voltage VCEO Collector-emitter voltage VEBO Emitter-base voltage IC Collector current PT Total power dissipation Tj Junction temperature Tstg Storage temperature CONDITIONS Open emitter Open base Open collector Tmb=25 VALUE 300 300 6 1 40 150 -55~150 UNIT V V V A W Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ; IB=0 VCEsat Collector-emitter saturation voltage IC=0.5A; IB=0.1A VBEsat Base-emitter saturation voltage IC=0.5A; IB=0.1A ICBO Collector cut-off current VCB=300V; IE=0 ICEO Collector cut-off current VCE=300V; IB=0 IEBO Emitter cut-off current VEB=6V; IC=0 hFE DC current gain IC=0.3A ; VCE=5V 2SC1050 MIN TYP.