2SC1454
DESCRIPTION
- With TO-3 package
- High breakdown voltage:VCEO=250V(min) APPLICATIONS
- For use in low frequency power amplifier applications
PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION
Absolute maximum ratings(Ta= )
SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 300 250 7 4 50 150 -55~150 UNIT V V V A W
Savant IC Semiconductor
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Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN
SYMBOL
TYP.
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=25m A ;IB=0
VCEsat
Collector-emitter saturation voltage
IC=3A; IB=0.3A
VBEsat
Base-emitter saturation voltage
IC=3A; IB=0.3A
ICBO
Collector...
