SavantIC 2SC3025
Silicon power Transistor
DESCRIPTION
●With TO-3 package●High breakdown voltage
APPLICATIONS
●High voltage power switching character display horizontal deflection output PINNING(see Fig.2) PIN 1 2 3 Base EmitterDESCRIPTION
2SC3025 Fig.1 simplified outline (TO-3) and symbol CollectorABSOLUTE MAXIMUM RATINGS
(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICP PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 1500 800 6 5 6 50 150 -45~150 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current CONDITIONS IC=10mA ;RBE=8 IE=10mA; IC=0 IC=5A; IB=1.25A IC=5A; IB=1.25A VCE=1500V; RBE=8 MIN 800 6 2SC3025 SYMBOL V(BR)CEO V(BR)EBO VCE(sat) VBE(sat) ICES TYP.