2SC3026 Description
Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current CONDITIONS IC=10mA ;RBE=9 IE=10mA; RBE=9 MIN 800 6 2SC3026 SYMBOL V(BR)CEO V(BR)EBO VCE(sat) VBE(sat) ICES TYP. MAX UNIT V V 2.0 1.5 0.5 V V mA...