2SC3060 Description
Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage CONDITIONS IC=10mA ;RBE=> IC=1mA; IE=0 ICBO Collector cut-off current VCB=1000V; IE=0, TC=100 IEBO hFE fT Cob Emitter cut-off current DC...