2SC3063 Overview
Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter saturation voltage Base-emitter on voltage Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage DC current gain Output capacitance Transition frequency CONDITIONS IC=30mA ;IB=3m A IC=30mA ; VCE=10V IC=10µA;IE=0 IC=100µA; VCB=30V;f=1MHz...
