2SC3211A
DESCRIPTION
- With TO-3PFa package
- High VCBO
- Low collector saturation voltage APPLICATIONS
- For high speed switching applications PINNING(see Fig.2)
PIN 1 2 3 Base Collector Emitter DESCRIPTION
ABSOLUTE MAXIMUM RATINGS(Ta=25 )
SYMBOL VCBO VCEO VEBO IC ICP IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current TC=25 PC Collector power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 3 150 -55~150 Open emitter Open base Open collector CONDITIONS VALUE 900 500 8 5 10 3 70 W UNIT V V V A A A
Savant IC Semiconductor
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Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=0.2A ;L=25m H IC=3A; IB=0.6A IC=3A;...
