With TO-3PFa package
High VCBO
Low collector saturation voltage APPLICATIONS
For high speed switching applications PINNING(see Fig.2)
PIN 1 2 3 Base Collector Emitter DESCRIPTION
ABSOLUTE MAXIMUM RATINGS(Ta=25 )
SYMBOL VCBO VCEO VEBO IC ICP IB PARAMETER Collector-base voltage Co
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SavantIC Semiconductor
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Product Specification
Silicon NPN Power Transistors
2SC3211A
DESCRIPTION ·With TO-3PFa package ·High VCBO ·Low collector saturation voltage APPLICATIONS ·For high speed switching applications PINNING(see Fig.2)
PIN 1 2 3 Base Collector Emitter DESCRIPTION
ABSOLUTE MAXIMUM RATINGS(Ta=25 )
SYMBOL VCBO VCEO VEBO IC ICP IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current TC=25 PC Collector power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 3 150 -55~150 Open emitter Open base Open collector CONDITIONS VALUE 900 500 8 5 10 3 70 W UNIT V V V A A A
SavantIC Semiconductor
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2SC3211A Datasheet
