SavantIC 2SC3211A
SILICON POWER TRANSISTOR
DESCRIPTION
●With TO-3PFa package●High VCBO
●Low collector saturation voltage
APPLICATIONS
●For high speed switching applications PINNING(see Fig.2) PIN 1 2 3 Base Collector EmitterDESCRIPTION
ABSOLUTE MAXIMUM RATINGS
(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICP IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current TC=25 PC Collector power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 3 150 -55~150 Open emitter Open base Open collector CONDITIONS VALUE 900 500 8 5 10 3 70 W UNIT V V V A A A SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=0.2A ;L=25mH IC=3A; IB=0.6A IC=3A; IB=0.6A VCB=90...