2SC3212A
DESCRIPTION
- With TO-3PFa package
- Low collector saturation voltage
- High VCBO
- High speed switching APPLICATIONS
- For high speed switching applications
PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION
Absolute maximum ratings(Ta=25 )
SYMBOL PARAMETER 2SC3212 VCBO Collector-base voltage 2SC3212A VCEO VEBO IC ICM IB Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current TC=25 PC Collector power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 3 150 -55~150 Open base Open collector Open emitter 900 500 8 7 15 4 100 W V V A A A CONDITIONS VALUE 800 V UNIT
Savant IC Semiconductor
..
Product Specification
Silicon NPN Power Transistors
2SC3212 2SC3212A
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage 2SC3212 2SC3212A CONDITIONS IC=0.2A;L=25m H IC=5A ;IB=1A IC=5A ;IB=1A VCB=800V; IE=0 100 VCB=900V; IE=0...
