SavantIC 2SD2000
SILICON POWER TRANSISTOR
DESCRIPTION
●With TO-220Fa package●High-speed switching
●Large collector power dissipation
APPLICATIONS
●For power switching applications PINNING PIN 1 2 3DESCRIPTION
Base Collector Emitter 2SD2000 Fig.1 simplified outline (TO-220Fa) and symbolABSOLUTE MAXIMUM RATINGS
AT Tc=25 SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current TC=25 PC Collector power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 2 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 80 60 6 4 8 1 35 W UNIT V V V A A A SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2000 CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDIT...