B1344 Overview
Description
With TO-220Fa package - High DC current gain - Low saturation voltage - DARLINGTON - Complement to type 2SD2025 APPLICATIONS - For low frequency power amplifier and power driver applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol DESCRIPTION SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector -emitter voltage Emitter-base voltage Collector current Collector current-peak Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 30 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE -100 -100 -7 -8 -10 2 W UNIT V V V A A SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1344 CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN TYP. MAX UNIT SYMBOL V(BR)CEO V(BR)CBO VCEsat ICBO IEBO hFE fT COB Collector-emitter breakdown voltage IC=-5mA; IB=0 IC=-50µA; IE=0 IC=-3A ;IB=-6mA VCB=-100V; IE=0 VEB=-5V; IC=0 IC=-2A ; VCE=-3V IC=-0.5A ; VCE=-5V IE=0 ; VCB=-10V;f=1MHz -100 V Collector-base breakdown voltage -100 V Collector-emitter saturation voltage -1.0 -1.5 V Collector cut-off current -10 µA Emitter cut-off current -3.0 mA DC current gain 1000 20000 Transition frequency 12 MHz Output capacitance 90 pF 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1344 Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm) 3.
