BU2508AF Overview
Description
With TO-3PFa package - High voltage - High speed switching APPLICATIONS - For use in horizontal deflection circuit of colour TV receivers PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION SYMBOL VCBO VCEO IC ICM IB IBM Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Collector current (DC) Collector current (Pulse) Base Collector current (DC) Base current (Pulse) Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base VALUE 1500 700 8 15 4 6 45 150 -65~150 UNIT V V A A A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN BU2508AF SYMBOL TYP. MAX UNIT VCEO(SUS) V(BR)EBO VCEsat VBEsat ICES IEBO hFE-1 hFE-2 CC Collector-emitter sustaining voltage IC=100mA ;IB=0,L=25mH IE=1mA ;IC=0 IC=4.5A ;IB=1.1A IC=4.5A ;IB=1.7 A VCE=BVCES; VBE=0 TC=125 VEB=7.5V; IC=0 IC=0.1A ; VCE=5V IC=4.5A ; VCE=1V IE=0; f=1MHz;VCB=10V 700 V Emitter-base breakdown voltage 7.5 13.5 V Collector-emitter saturation voltage 1.0 V Base-emitter saturation voltage 1.1 1.0 2.0 1.0 V Collector cut-off current mA Emitter cut-off current mA DC current gain 13 DC current gain 4 5.5 7 Collector capacitance 80 pF 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BU2508AF Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3.
