The BU2508AF is a Silicon NPN Power Transistors.
| Part Number | BU2508AF Datasheet |
|---|---|
| Manufacturer | Comset Semiconductors |
| Overview | NPN BU2508AF NPN SILICON POWER TRANSISTORS The BU2508AF is silicon power transistor mounted in Jedec TO-3PF plastic package. They are designed for use in horizontal deflection circuits of color TV re. ector-Emitter Sustaining Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Test Condition(s) IC= 100mA IB= 0, L= 25mH IE= 1mA IC= 0 IC= 4.5A IB= 1.1A IC= 4.5A IB= 1.7A VCE= 1500V VBE= 0 VCE= 1500V, VBE= 0 TC=125°C VE. |
| Part Number | BU2508AF Datasheet |
|---|---|
| Description | Silicon Diffused Power Transistor |
| Manufacturer | NXP Semiconductors |
| Overview | Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receiver. exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Co. |
| Part Number | BU2508AF Datasheet |
|---|---|
| Description | SILICON POWER TRANSISTOR |
| Manufacturer | SavantIC |
| Overview | ·With TO-3PFa package ·High voltage ·High speed switching APPLICATIONS ·For use in horizontal deflection circuit of colour TV receivers PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute m. ing voltage IC=100mA ;IB=0,L=25mH IE=1mA ;IC=0 IC=4.5A ;IB=1.1A IC=4.5A ;IB=1.7 A VCE=BVCES; VBE=0 TC=125 VEB=7.5V; IC=0 IC=0.1A ; VCE=5V IC=4.5A ; VCE=1V IE=0; f=1MHz;VCB=10V 700 V Emitter-base breakdown voltage 7.5 13.5 V Collector-emitter saturation voltage 1.0 V Base-emitter saturatio. |
| Part Number | BU2508AF Datasheet |
|---|---|
| Description | NPN Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use. S TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0 700 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 7.5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A; IB= 1.1A 1.0 V V. |
| Seller | Inventory | Price Breaks | Buy |
|---|---|---|---|
| UnikeyIC | 4500 | 30+ : 1.3592 USD 450+ : 1.3001 USD |
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| SHENGYU ELECTRONICS | 16452 | 1+ : 0.3874 USD 10+ : 0.3797 USD 100+ : 0.37 USD 1000+ : 0.36 USD |
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| Unikeyic (ICkey) | 4500 | 30+ : 1.3592 USD 450+ : 1.3001 USD |
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| Part Number | Manufacturer | Description |
|---|---|---|
| BU2508DF | Inchange Semiconductor | NPN Transistor |
| BU2508DF | SavantIC | SILICON POWER TRANSISTOR |
| BU2508DF | NXP Semiconductors | Silicon Diffused Power Transistor |
| 2508DX | NXP Semiconductors | BU2508DX |
| BU2508-E3 | Vishay | Bridge Rectifiers |
| BU2508A | NXP Semiconductors | Silicon Diffused Power Transistor |
| BU2508AX | NXP Semiconductors | Silicon Diffused Power Transistor |