MJ16018 Overview
Description
With TO-3 package - High voltage ,high speed APPLICATIONS - Switching Regulators - Inverters - Solenoids - Relay Drivers - Motor Controls - Deflection Circuits PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector DESCRIPTION MJ16018 Fig.1 simplified outline (TO-3) and symbol SYMBOL VCBO VCEO VEBO IC ICM IB IBM PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Base current Base current-Peak Total power dissipation Junction temperature Storage temperature TC=25 TC=100 CONDITIONS Open emitter Open base Open collector VALUE 1500 800 6 10 15 8 12 175 100 150 -55~150 UNIT V V V A A A A W SYMBOL Rth j-C PARAMETER SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector outoput capacitance CONDITIONS IC=50mA; IB=0 IC=5A ;IB=2A TC=110 IC=10A ;IB=5A IC=5A ;IB=2A TC=110 VCEV=1500V,VBE(off)=1.5Vdc TC=100 VCE=1500V; RBE=50= TC=100 VEB=6V; IC=0 IC=5A ; VCE=5V f=1kHz ; VCB=10V 4 MIN 800 MJ16018 SYMBOL VCEO(SUS) VCE(sat)-1 VCE(sat)-2 VBE(sat) ICEV ICER IEBO hFE COB TYP. MAX UNIT V 1.0 1.5 5.0 1.5 1.5 0.25 1.50 2.5 0.1 V V V mA mA mA 450 pF Switching times resistive load td tr ts tf Delay time Rise time Storage time Fall time IC=5A; IB1= IB2=2.0A VCC=250V ,RB2=3= PW=25µs Duty CycleC2% 0.085 0.90 4.5 0.2 0.2 2.0 9.0 0.4 µs µs µs µs 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLI.
