Datasheet Details
| Part number | MJE181 |
|---|---|
| Manufacturer | SavantIC |
| File Size | 130.34 KB |
| Description | (MJE180 - MJE182) SILICON POWER TRANSISTOR |
| Datasheet | MJE181 MJE180 Datasheet (PDF) |
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Overview: SavantIC Semiconductor Product Specification Silicon NPN Power Transistors MJE180/181/182 www.datasheet4u.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | MJE181 |
|---|---|
| Manufacturer | SavantIC |
| File Size | 130.34 KB |
| Description | (MJE180 - MJE182) SILICON POWER TRANSISTOR |
| Datasheet | MJE181 MJE180 Datasheet (PDF) |
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·With TO-126 package ·Complement to type MJE170/171/172 APPLICATIONS ·For low power audio amplifier and low current high speed switching applications PINNING (see Fig.2) PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL PARAMETER MJE180 VCBO Collector-base voltage MJE181 MJE182 MJE180 VCEO Collector-emitter voltage MJE181 MJE182 VEBO IC ICM IB PC Ti Tstg Emitter-base voltage Collector current Collector current-peak Base current Ta=25 Collector power dissipation TC=25 Junction temperature Storage temperature 12.5 150 -65~150 Open collector Open base Open emitter CONDITIONS VALUE 60 80 100 40 60 80 7 3 6 1 1.5 W V A A A V V UNIT SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER MJE180 V(BR)CEO Collector-emitter breakdown voltage MJE181 MJE182 VCE(sat)-1 VCE(sat)-2 VCE(sat)-3 VBE(sat)-1 VBE(sat)-2 VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage MJE180 ICBO Collector cut-off current MJE181 MJE182 IEBO hFE-1 hFE-2 hFE-3 fT COB Emitter cut-off current DC current gain DC current gain DC current gain Transition frequency Output capacitance IC=500mA ;IB=50mA IC=1.5A ;IB=150mA IC=3A ;IB=600mA IC=1.5A ;IB=150mA IC=3A ;IB=600mA IC=500mA ;
VCE=1V VCB=60V;
IE=0 TC=150 VCB=80V;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
MJE181 | NPN PLASTIC POWER TRANSISTORS | CDIL |
 |
MJE181 | POWER TRANSISTOR | Central Semiconductor |
 |
MJE181 | NPN Epitaxial Silicon Transistor | Fairchild |
 |
MJE181 | 3 AMPERE POWER TRANSISTORS | Motorola |
 |
MJE181 | Complementary Plastic Silicon Power Transistors | ON Semiconductor |
| Part Number | Description |
|---|---|
| MJE180 | (MJE180 - MJE182) SILICON POWER TRANSISTOR |
| MJE18002 | SILICON POWER TRANSISTOR |
| MJE18004 | SILICON POWER TRANSISTOR |
| MJE18006 | SILICON POWER TRANSISTOR |
| MJE18008 | SILICON POWER TRANSISTOR |
| MJE182 | (MJE180 - MJE182) SILICON POWER TRANSISTOR |
| MJE12007 | SILICON POWER TRANSISTOR |
| MJE13002 | Silicon NPN Power Transistors |
| MJE13003 | Silicon NPN Power Transistors |
| MJE13004 | SILICON POWER TRANSISTOR |