MJE180
DESCRIPTION
- With TO-126 package
- plement to type MJE170/171/172 APPLICATIONS
- For low power audio amplifier and low current high speed switching applications PINNING (see Fig.2)
PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION
ABSOLUTE MAXIMUM RATINGS(TC=25 )
SYMBOL PARAMETER MJE180 VCBO Collector-base voltage MJE181 MJE182 MJE180 VCEO Collector-emitter voltage MJE181 MJE182 VEBO IC ICM IB PC Ti Tstg Emitter-base voltage Collector current Collector current-peak Base current Ta=25 Collector power dissipation TC=25 Junction temperature Storage temperature 12.5 150 -65~150 Open collector Open base Open emitter CONDITIONS VALUE 60 80 100 40 60 80 7 3 6 1 1.5 W V A A A V V UNIT
Savant IC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER MJE180 V(BR)CEO Collector-emitter breakdown voltage MJE181 MJE182 VCE(sat)-1 VCE(sat)-2 VCE(sat)-3 VBE(sat)-1 VBE(sat)-2 VBE Collector-emitter saturation...
