Collector
Emitter Sustaining Voltage
: VCEO(SUS) = 40 V
DC Current Gain
: hFE = 30(Min) @ IC= 0.5 A = 12(Min) @ IC= 1.5 A
Complement to the PNP MJE170
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
L
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isc Silicon NPN Power Transistor
MJE180
DESCRIPTION ·Collector–Emitter Sustaining Voltage—
: VCEO(SUS) = 40 V ·DC Current Gain—
: hFE = 30(Min) @ IC= 0.5 A = 12(Min) @ IC= 1.5 A
·Complement to the PNP MJE170 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Low power audio amplifier ·Low current high speed switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
40
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
3
A
ICM
Collector Current-peak
6
A
IB
Base Current
Collector Power Dissipation
PC
Ta=25℃ Collector Power Dissipation
TC=25℃
Ti
Junction Temperature
1
A
1.5 W
12.
MJE180 Datasheet
